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STP4NM60 STD3NM60 - STD3NM60-1 N-CHANNEL 600V - 1.3 - 3A TO-220/DPAK/IPAK Zener-Protected MDmeshTMPower MOSFET TYPE VDSS RDS(on) ID Pw STP4NM60 600 V < 1.5 4A 69 W STD3NM60 600 V < 1.5 3A 42 W STD3NM60-1 600 V < 1.5 3A 42 W 3 2 s TYPICAL RDS(on) = 1.3 1 s HIGH dv/dt AND AVALANCHE CAPABILITIES IPAK s IMPROVED ESD CAPABILITY TO-220 s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE s TIGHT PROCESS CONTROL AND HIGH 3 MANUFACTORING YIELDS 1 DPAK DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain pro- INTERNAL SCHEMATIC DIAGRAM cess with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition's products. APPLICATIONS The MDmeshTM family is very suitable for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP4NM60 P4NM60 TO-220 TUBE STD3NM60T4 D3NM60 DPAK TAPE & REEL STD3NM60-1 D3NM60 IPAK TUBE September 2002 1/12 STP4NM60 / STD3NM60 / STD3NM60-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STD3NM60 STP4NM60 STD3NM60-1 VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS